A Review on Modeling of AlGaN/GaN MODFET based on Artificial Neural Networks

Abstract

High electron mobility transistors (HEMTs) based on GaN have gained attention mainly due to its high quality performance especially in high-frequency as well as high-power devices. Significant developments have been donein terms of fabrication and performance of HEMT through several modeling techniques. This review article focuses on artificial neural networks for modeling of HEMT devices with enhanced performance.The focus of this article is further extended to the discussion of different models of AlGaN/GaN HEMT devices.